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hal320 differential hall effect sensor ic edition july 15, 1998 6251-439-1ds micr onas micronas
hal320 2 micronas differential hall effect sensor ic in cmos technology introduction the hal 320 is a differential hall switch produced in cmos technology. the sensor includes 2 temperature- compensated hall plates (2.25 mm apart) with active off- set compensation, a differential amplifier with a schmitt trigger, and an open-drain output transistor (see fig. 2). the hal 320 is a differential sensor which responds to spatial differences of the magnetic field. the hall volt- ages at the two hall plates, s 1 and s 2 , are amplified with a differential amplifier. the differential signal is compared with the actual switching level of the internal schmitt trigger. accordingly, the output transistor is switched on or off. the sensor has a bipolar switching behavior and requires positive and negative values of ? b = b s1 ? b s2 for correct operation. basically, there are two ways to generate the differential signal ? b: ? rotating a multi-pole-ring in front of the branded side of the package (see fig. 4, fig. 5, and fig. 6). ? back-bias applications: a magnet on the back side of the package generates a back-bias field at both hall plates. the differential signal ? b results from the magnetic modulation of the back-bias field by a rotating ferromagnetic target. the active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture. the sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 4.5 v to 24 v in the ambient temperature range from ?40 c up to 150 c. the hal 320 is an ideal sensor for target wheel applica- tions, ignition timing, anti-lock brake systems, and revo- lution counting in extreme automotive and industrial en- vironments the hal 320 is available in two smd-packages (sot-89a and sot-89b) and in a leaded version (to-92ua). features: ? distance between hall plates: 2.25 mm ? operates from 4.5 v to 24 v supply voltage ? switching offset compensation at 62 khz ? overvoltage protection ? reverse-voltage protection of v dd -pin ? short-circuit protected open-drain output by thermal shutdown ? operates with magnetic fields from dc to 10 khz ? output turns low with magnetic south pole on branded side of package and with a higher magnetic flux densi- ty in sensitive area s1 as in s2 ? on-chip temperature compensation circuitry mini- mizes shifts of the magnetic parameters over temper- ature and supply voltage range ? emc corresponding to din 40839 marking code type temperature range a e c hal320sf, hal320so, hal320ua 320a 320e 320c operating junction temperature range (t j ) a: t j = ?40 c to +170 c e: t j = ?40 c to +100 c c: t j = 0 c to +100 c the relationship between ambient temperature (t a ) and junction temperature (t j ) is explained on page 11. hall sensor package codes type: 320 halxxxpa-t temperature range: a, e, or c package: sf for sot-89b so for sot-89a ua for to-92ua type: 320 package: to-92ua temperature range: t j = ?40 c to +100 c example: hal320ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: ?ordering codes for hall sensors?.
hal320 3 micronas solderability ? package sot-89a and sot-89b: according to iec68-2-58 ? package to-92ua: according to iec68-2-20 out gnd 3 2 1 v dd fig. 1: pin configuration functional description this hall effect sensor is a monolithic integrated circuit with 2 hall plates 2.25 mm apart that switches in re- sponse to differential magnetic fields. if magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased hall plates force hall voltages proportional to these fields. the difference of the hall voltages is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built- in hysteresis eliminates oscillation and provides switch- ing behavior of the output without oscillation. magnetic offset caused by mechanical stress at the hall plates is compensated for by using the ? switching offset compensation technique ? : an internal oscillator pro- vides a two phase clock (see fig. 3). the difference of the hall voltages is sampled at the end of the first phase. at the end of the second phase, both sampled differen- tial hall voltages are averaged and compared with the actual switching point. subsequently, the open drain output switches to the appropriate state. the amount of time that elapses from crossing the magnetic switch lev- el to the actual switching of the output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series re- sistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for values ranging from 0 v to ? 15 v. hal320 temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock gnd 2 fig. 2: hal320 block diagram short circuit & overvoltage protection reverse voltage & overvoltage protection hall plate s1 hall plate s2 t v ol v out 1/f osc = 16 s fig. 3: timing diagram v oh b b on f osc t t t f t i dd t
hal320 4 micronas outline dimensions fig. 4: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 4 0.2 1.53 0.05 0.125 spgs7001-6-b3/1e top view y 123 2 0.7 sensitive area s 1 sensitive area s 2 x 1 x 2 branded side 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 3.1 1.27 1.27 2.54 123 0.5 0.42 fig. 5: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 1.5 0.05 4.06 0.1 2.03 3.05 0.1 0.48 sensitive area s 1 sensitive area s 2 spgs7002-6-b/1e x 1 x 2 sensitive area s 1 sensitive area s 2 x 1 x 2 4.55 0.1 2.55 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 4 0.2 1.15 0.05 0.125 branded side spgs0022-2-b3/1e top view y 123 2 0.3 fig. 6: plastic small outline transistor package (sot-89b) weight approximately 0.04 g dimensions in mm dimensions of sensitive areas 0.08 mm x 0.17 mm (each) positions of sensitive areas sot-89a sot-89b to-92ua x 1 = ? 1.125 mm 0.2 mm x 2 = 1.125 mm 0.2 mm x 2 ? x 1 = 2.25 mm 0.01 mm y = 0.98 mm 0.2 mm y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm x 1 and x 2 are referenced to the center of the package
hal320 5 micronas absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v ? v p test voltage for supply 1 ? 24 2) ? v ? i dd reverse supply current 1 ? 50 1) ma i ddz supply current through protection device 1 ? 200 3) 200 3) ma v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 30 ma i omax peak output on current 3 ? 250 3) ma i oz output current through protection device 3 ? 200 3) 200 3) ma t s storage temperature range ? 65 150 c t j junction temperature range ? 40 ? 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 ? series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t < 1000h stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4.5 24 v i o continuous output on current 3 ? 20 ma v o output voltage 3 ? 24 v r v series resistor 1 ? 270 ?
hal320 6 micronas electrical characteristics at t j = ? 40 c to +170 c , v dd = 4.5 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2.8 4.7 6.8 ma t j = 25 c i dd supply current over temperature range 1 1.8 4.7 7.5 ma v ddz overvoltage protection at supply 1 ? 28.5 32.5 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 ? 28 32.5 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 ? 170 250 mv v dd = 12 v, i o = 20 ma, t j = 25 c v ol output voltage over temperature range 3 ? 170 400 mv i o = 20 ma v ol output voltage over temperature range 3 ? 210 500 mv i o = 25 ma i oh output leakage current 3 ? ? 1 a v oh = 4.5 v... 24 v, b < b off , t j = 25 c i oh output leakage current over temperature range 3 ? ? 10 a v oh = 4.5 v... 24 v, b < b off , t j 150 c f osc internal oscillator chopper frequency ? 42 62 75 khz t j = 25 c f osc internal oscillator chopper fre- quency over temperature range ? 40 62 80 khz t en(o) enable time of output after setting of v dd 3 ? 35 ? s v dd = 12 v, b > b on + 2mt or b < b off ? 2mt t r output rise time 3 ? 80 400 ns v dd = 12 v, rl = 820 ? , cl = 20 pf t f output fall time 3 ? 50 400 ns v dd = 12 v, rl = 820 ? , cl = 20 pf r thjsb case sot-89a, sot-89b thermal resistance junction to substrate backside ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 8 r thjs case to-92ua thermal resistance junction to soldering point ? 150 200 k/w
hal320 7 micronas magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 24 v typical characteristics for v dd = 12 v magnetic flux density values of switching points (condition: ? 10 mt < b 0 < 10 mt) positive flux density values refer to the magnetic south pole at the branded side ot the package. ? b = b s1 ? b s2 parameter ?40 on point ? b on ? b > ? b on ? 1.5 1.2 2.5 -1.5 1.2 2.5 ? 2 1.2 3 ? 2.5 1.1 3.5 mt off point ? b off ? b < ? b off ? 2.5 ? 0.6 1.5 ? 2.5 ? 0.6 1.5 ? 3 ? 0.5 2 ? 3.5 ? 0.4 2.5 mt hysteresis ? b hys = ? b on ? ? b off 1 1.8 4 1 1.8 4 1 1.7 4 0.8 1.5 4 mt offset ? b offset = (? b on + ? b off )/2 ? 2 0.3 2 ? 2 0.3 2 ? 2.5 0.4 2.5 ? 3 0.4 3 mt in back-biased applications, sensitivity mismatch between the two hall plates s 1 and s 2 can lead to an additional offset of the magnetic switching points. in back-biased applications with the magnetic preinduction b 0 , this sensitivity mis- match generates the magnetic offset ? b offsetbb = |s 1 ? s 2 |/s 1 b 0 + ? b offset . parameter ?40 sensitivity mismatch 1) |s 1 ? s 2 |/s 1 1.5 2) 1.0 2) 1.0 2) 0.5 2) % 1) mechanical stress from packaging can influence sensitivity mismatch. 2) all values are typical values. the magnetic switching points are checked at room temperature at a magnetic preinduction of b 0 = 150 mt. these magnetic parameters may change under external pressure and during the lifetime of the sensor. parameter 25 on point ? b onbb ? 4.5 1.5 5.5 mt off point ? b offbb ? 5.5 ? 0.3 4.5 mt hysteresis ? b hys 1 1.8 4 mt offset ? b offsetbb ? 5 0.6 +5 mt b off min b on max b hys output voltage fig. 7: definition of switching points and hysteresis 0 b off b on b = b s1 ? b s2 v oh v ol fig. 8: recommended pad size for sot-89a and sot-89b; dimensions in mm 5.0 2.0 2.0 1.0
hal320 8 micronas ? 2 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 ? 50 0 50 100 150 200 c mt b on b off fig. 9: magnetic switch points versus temperature v dd = 12 v t a ? 2 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 v mt v dd b on b off b on b off t a = ? 40 c t a = 25 c t a = 150 c t a = 100 c fig. 10: magnetic switch points versus supply voltage ? 2 ? 1.5 ? 1.0 ? 0.5 0.0 0.5 1.0 1.5 2.0 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 11: magnetic switch points versus supply voltage ? 15 ? 10 ? 5 0 5 10 15 ? 15 ? 10 ? 5 0 5 1015202530 v ma v dd i dd fig. 12: supply current versus supply voltage t a = ? 40 c t a = 25 c t a = 150 c
hal320 9 micronas 0 1 2 3 4 5 6 7 8 123456 v ma v dd i dd t a = ? 40 c t a = 25 c t a = 150 c fig. 13: supply current versus supply voltage 0 1 2 3 4 5 6 7 8 ? 50 0 50 100 150 200 c ma t a i dd v dd = 4.5 v v dd = 12 v fig. 14: supply current versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 ? 50 0 50 100 150 200 c khz t a f osc v dd = 4.5 v...24 v fig. 15: internal chopper frequency versus ambient temperature 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = ? 40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c fig. 16: output low voltage versus supply voltage
hal320 10 micronas 0 100 200 300 400 500 600 34567 v mv v dd v ol t a = 40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c fig. 17: output low voltage versus supply voltage 0 100 200 300 400 ? 50 0 50 100 150 200 c mv t a v ol v dd = 24 v v dd = 4.5 v fig. 18: output low voltage versus ambient temperature i o = 20 ma 15 20 25 30 35 v a v oh i oh t a = ? 40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 ? 6 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 3 10 4 fig. 19: output high current versus output voltage ? 50 0 50 100 150 200 c a t a i oh v oh = 24 v 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 fig. 20: output leakage current versus ambient temperature v oh = 4.5 v
hal320 11 micronas application notes mechanical stress can change the sensitivity of the hall plates and an offset of the magnetic switching points may result. external mechanical stress on the sensor must be avoided if the sensor is used under back-biased conditions. this piezo sensitivity of the sensor ic cannot be completely compensated for by the switching offset compensation technique. in order to assure switching the sensor on and off in a back-biased application, the minimum magnetic modu- lation of the differential field should amount to more than 10% of the magnetic preinduction. if the hal 320 sensor ic is used in back-biased applica- tions, please contact our application department. they will provide assistance in avoiding applications which may induce stress to the ics. this stress may cause drifts of the magnetic parameters indicated in this data sheet. for electromagnetic immunity, it is recommended to ap- ply a 4.7 nf capacitor between v dd (pin 1) and ground (pin 2). for automotive applications, a 220 series re- sistor to pin 1 is recommended. because of the i dd peak at 3.5 v, the series resistor should not be greater than 270 ? . the series resistor and the capacitor should be placed as close as possible to the ic. for optimal emc behavior, the test circuits in fig. 21 and fig. 22 are rec- ommended. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + ? t at static conditions, the following equations are valid: ? for sot-89x: ? t = i dd * v dd * r thjsb ? for to-92ua: ? t = i dd * v dd * r thja for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. recommended test circuits for electromagnetic compatibility test pulses v emc corresponding to din 40839. out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 ? r l 1.2 k ? 20 pf fig. 21: test circuit 2: test procedure for class a out gnd 3 2 1v dd 4.7 nf v emc r v 220 ? r l 680 ? fig. 22: test circuit 1: test procedure for class c
hal320 12 micronas data sheet history 1. final data sheet: ? hal 320 differential hall effect sensor ic ? , july 15, 1998, 6251-439-1ds. first release of the final data sheet. micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (07/1998) order no. 6251-439-1ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.

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